| 摘要 |
PURPOSE:To enable dimensions of a circuit pattern provided onto a semiconductor wafer to be accurately measured with a simple device by a method wherein a triangular or diamond-shaped dimension controlling pattern is formed on the surface of the semiconductor wafer where the required circuit pattern is transferred. CONSTITUTION:A dimension controlling pattern 6 is formed on the surface of the semiconductor wafer where a circuit pattern 5 is provided. The dimension controlling pattern 6 is, for instance, an acute-angled triangle of base length 3mum and height 15mum and marked in white. The base length of the triangle can be set 1.5 to 3 times as large as a minimum dimension, and the height of the triangle can be set two to five times as large as the base length. Or, the dimension controlling pattern 6 is, for instance, a diamond-shaped form of width 3mum and height 30mum and marked in white. By this setup, when a semiconductor wafer is not correctly formed in dimensions as designed, the dimensional change is enlarged in a dimension controlling pattern, which is measured by an optical dimension measuring device, and consequently a circuit pattern provided onto a semiconductor wafer can be easily and quickly measured. |
