| 摘要 |
PURPOSE:To increase the yield of a semiconductor device and improve the reliability of the device by preventing the occurrence of insufficient etching. CONSTITUTION:First and second chemically amplified resists 28a and 28b are formed by applying a chemically amplified resist 26 containing H<+> to a second insulating film 25 and, after removing the resist 26 so that the resist 26 can remain in a first and second recessed sections 25a and 25b only, applying a base resist 27 containing no H<+> to the film 25 and resist 26 and diffusing the H<+> contained in the resist 26 into the base resist 27. Then a first contact hole is formed into the insulating film 25 by exposing and developing the first resist 28a by using a mask film 29 as a mask and etching the resist 28a by using the base resist 27 and second resist 28b as masks. Therefore, the occurrence of insufficient etching can be prevented. |
