| 摘要 |
<p>PURPOSE:To provide a correcting method for a phase shift mask which does not substantially affect a resist pattern even if any defective part exsists in the mask. CONSTITUTION:When the defective part is corrected, the light transmittance in the corrected region is reduced and the light intensity of the transmitted light beam passed through the region is thus reduced. Consequently, when the mask pattern of the phase shift mask is projected on a wafer by using a reduction stepper the distribution of the light intensity at an image-formed position of the projection optical system is smaller than the light intensity corresponding to a region not corrected because the light intensity (at the normal time) at a position corresponding to the corrected region has the defective part. In this case, auxiliary openings 19 and 22 are formed at the defective parts 16 and 20, i.e., at a light shielding pattern 14 in close vicinity to the corrected region. The transmitted light beam passed through the auxiliary openings 19 and 22 compensates for the reduction of the light quantity of the transmitted light beam at the corrected region, thereby raising the light intensity at the corresponding image-formed position toward a light intensity level at the positive normal time. Thus, the formation of a prescribed resist pattern as previously designed is allowable.</p> |
