| 摘要 |
<p>PURPOSE: To provide a process for producing a mask having a stable film thickness and size. CONSTITUTION: This process includes a stage for successively adhering a chromium layer 30 and an oxide layer 40 on a quartz plate 10, a stage for successively etching these oxide layer 40 and chromium layer 30 by utilizing an electron beam and a stage for forming a phase shifter by oxidizing the oxide layer 40 to expand the volume.</p> |
