| 摘要 |
PURPOSE:To form a resist pattern with good shape by clarifying the contrast between an exposing part and an unexposing part at the time of sillylation. CONSTITUTION:On a substrate 1, a resist 2 consisting of naphthoquinone diazide and a resin is applied, and then a heating process for bridging mutual resins or naphthoquinone diazide and the resin, a pattern exposure process using a desired mask 4, a process for forming a mono-molecular layer containing Si on a pattern exposing part of the resist 2 and a process for forming a resist pattern 2A by selectively developing the resist 2 by dry etching are executed to form a pattern. By sillylation in which the contrast between the exposing part and the unexposing part is clarified, the pattern forming with good shape is realized and thereby an industrial production of the device in good yield is attained. |
