preparing a GaAs substrate; depositing a Si layer on the substrate; forming a first photoresist pattern on the Si layer; etching the Si layer using the first photoresist pattern as a mask to define ohmic contact regions of source/drain electrodes; forming a second photoresist pattern on the substrate after removal of the first photoresist pattern to define a channel region and injecting a predetermined quantity of Si ions into the substrate; depositing a protective layer around the substrate after removal of the second photoresist pattern; and annealing the substrate to activate Si ions of the remaining Si layer and diffusing the activating Si ions into the deep direction of the substrate.
申请公布号
KR940004262(B1)
申请公布日期
1994.05.19
申请号
KR19900021813
申请日期
1990.12.26
申请人
KOREA ELECTRONICS & TELECOMMUNICATIONS RESEARCH INSTITUTE