发明名称 |
ISOLATION METHOD FOR COMPONENTS OF SEMICONDUCTOR |
摘要 |
forming an oxide on a semiconductor substrate; forming polysilicon layers of a multi-layered structure, each layer having a different grain size; forming a nitride layer, and etching the nitride layer selectively so as to expose a isolation region of the substrate, and forming a field oxide on the isolation region to thereby forming the uniform interface of active region and field region.
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申请公布号 |
KR940004253(B1) |
申请公布日期 |
1994.05.19 |
申请号 |
KR19910009538 |
申请日期 |
1991.06.10 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, YUN - KI;BAN, CHON - SU;KIM, BYONG - RYOL;SON, YONG - BIN |
分类号 |
H01L21/76;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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