| 摘要 |
PURPOSE:To reflect light very efficiently without losing ohmic contact, by attaching and heat-treating ohmic metals, removing said metals, and attaching bonding metals, in a GaP light-emitting diode. CONSTITUTION:Metals 4a and 4b are attached to the surfaces of a GaP substrate 3 having a p-type region 1 and an n-type region 2, and are heat-treated in hydrogen atmosphere, thereby transformed layers 5a and 5b are formed. Thereafter, said metals 4a and 4b are melted and removed. Then, bonding metals 6a and 6b are attached by evaporation, and the metals 6a are photoetched and divided into small portions by dicing. |
