| 摘要 |
<p>The invention relates to integrated circuits, and more precisely fusible circuits. In order to improve the reliability of integrated circuits having a physical fuse, the invention proposes to associate, with the fuse (F), an electrically programmable non-volatile memory cell (TGF), the cell being programmed at the same time as the fuse is blown. The state of the fuse is confirmed by the state of the memory. In particular, the blown state of the fuse can be confirmed by the programmed state of the memory, in applications in which the important thing is to ensure that the circuit can continue to retain the functionalities defined by the blown state of the fuse. If the blown structure subsequently reassumes more or less the characteristics of the intact structure, the memory cell will deputise for the defective fuse. <IMAGE></p> |
