发明名称 |
Memory circuit with pumped voltage for erase and program operations |
摘要 |
A memory device is disclosed that employs hot electron injection for programming operations and Fowler-Nordheim tunneling for erase operations. The memory device requires only a single 5 volt power supply and does not require an external high voltage supply for program or erase operations. The memory device includes a charge pump section that internally generates the high voltage required for programming and erase operations. The same charge pump section is used for both program and erase power requirements.
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申请公布号 |
US5313429(A) |
申请公布日期 |
1994.05.17 |
申请号 |
US19920837303 |
申请日期 |
1992.02.14 |
申请人 |
CATALYST SEMICONDUCTOR, INC. |
发明人 |
CHEVALLIER, CHRISTOPHE J.;BAJWA, ASIM A.;RINERSON, DARRELL D.;HSIA, STEVE K. |
分类号 |
G11C5/14;G11C16/30;(IPC1-7):G11C16/02 |
主分类号 |
G11C5/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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