发明名称 |
Method of providing lower contact resistance in MOS transistors |
摘要 |
Germanium is used to significantly enhance the drift mobilities of minority carriers in the channels of N-channel and P-channel metal-oxide-semiconductor (MOS) transistors with silicon substrates. Germanium processing is also used to enhance the source/drain contact conductance for MOS devices. Methods are disclosed for forming the germanium-rich interfacial layer utilizing a germanium implant and wet oxidation or growing a silicon-germanium alloy by molecular beam epitaxy.
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申请公布号 |
US5312766(A) |
申请公布日期 |
1994.05.17 |
申请号 |
US19920832717 |
申请日期 |
1992.02.07 |
申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
ARONOWITZ, SHELDON;HART, COURTNEY;SKINNER, COURT |
分类号 |
H01L21/265;H01L21/316;H01L21/336;H01L29/08;H01L29/10;(IPC1-7):H01L21/265 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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