发明名称 Aluminum nitride substrate and method for producing same
摘要 This invention is directed to a laser-subdivided aluminum nitride substrate wherein a resolidified layer formed at the laser score lines is constituted by one or more types of material selected from the group consisting of oxides, nitrides and oxynitrides of aluminum and of additives of said aluminum nitride substrate, and to a method of producing an aluminum nitride substrate wherein, subsequent to laser scoring the substrate, a heat treatment step at about 1000 DEG C. to 1800 DEG C. is carried out prior to the step of metallizing. This simple method provides an aluminum nitride substrate having a prescribed withstand-voltage characteristic.
申请公布号 US5312698(A) 申请公布日期 1994.05.17
申请号 US19930104564 申请日期 1993.08.11
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 SATO, HIDEKI;SUGIURA, YASUYUKI
分类号 C04B41/00;C04B41/51;C04B41/80;C04B41/88;H01L23/15;H05K1/03;H05K3/00;(IPC1-7):C04B41/51 主分类号 C04B41/00
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