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发明名称
METHOD OF ION-CHEMICAL ETCHING OF SILICON DIOXIDE AND NITRIDE
摘要
申请公布号
RU749293(C)
申请公布日期
1994.05.15
申请号
SU19782709134
申请日期
1978.11.21
申请人
BULGAKOV S.S.;KOSOPLETKIN A.R.;KRASNOZHON A.I.;TOLSTYKH B.L.
发明人
BULGAKOV S.S.;KOSOPLETKIN A.R.;KRASNOZHON A.I.;TOLSTYKH B.L.
分类号
H01L21/3065;H01L21/306;(IPC1-7):H01L21/306
主分类号
H01L21/3065
代理机构
代理人
主权项
地址
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