| 摘要 |
PURPOSE:To achieve electrical reliability and high yield of an upper-layer interconnection in a two-layer interconnection. CONSTITUTION:An interlayer insulating film 3 is opened so as to include a stepped part by a first-layer interconnection 2, the opened region is covered again with an insulating film 3a so as to exclude the part of the first-layer interconnection, and a second-layer interconnection 5 is formed along a taper- shaped sidewall 3a1. As a result, since the second-layer interconnection 5 is formed on a gentle taper-shaped through hole 4, it is possible to avoid a disconnection due to the stepped part and an increase in a resistance. In addition, since an opening pattern mask which is larger than the first-layer interconnection 2 is used, the required pattern accuracy of this structure is relaxed sharply. |
