| 摘要 |
PURPOSE:To obtain the optical semiconductor device, the optical semiconductor which is not subjected to the effect of stress of the sealed resin and having low deterioration of brilliance by a method wherein, after optical semiconductor- fixed metal frame is dipped into a surface activating agent and it is dried up by heating, a liquid epoxy resin composition, containing an acid anhydride hardener, is cast. CONSTITUTION:A metal frame, on which an optical semiconductor is fixed, is dipped into a surface activating agent, and after the metal frame been dried up by heating, it is sealed by a semiconductor sealing liquid expoxy resin composition containing an acid anhydride hardener. For example, the metal frame, on which a semiconductor is fixed, is dipped into the NEOS RB-106 of a fluorine interface activator, heated up at 150 deg.C for five minutes, dried up by heating, and the solvent is removed. Then, methyl-hyxahydrophthalic anhydride of 100 parts and 2-ethylhexane salt of 1.8-ziazabicyclo (5, 4, 0) undecene-7 of 1 part are blended in the 82800 parts of the Epicote of bisphenol-A type epoxy resin, a semiconductor sealing liquid epoxy resin composition is poured in a mold, and an optical semiconductor device of 5approx.= is manufactured. |
