THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE:To avoid the step disconnection in an insulating layer and the field concentration phenomenon occurring in the active layer ends of the thin film transistor by contriving the constitution of the active layer ends. CONSTITUTION:An active layer 31 of the film transistor is composed to make the end thickness thereof get gradually thinner so that the thickness of a gate insulating film 36 as an insulating layer covering the active layer 31 may not get thinner yet gentle at the ends of the active layer 31 thereby avoiding the occurrence of the field concentration phenomenon.