| 摘要 |
PURPOSE: To provide a device which reduces all the base resistors by reducing a distance between emitter-base contact points and minimizes series base resistance to lower the resistance of a base sheet. CONSTITUTION: This system consists of a substrate 10, consisting of a semiconductor material, an n-type subcollector layer 14 densely dope-processed on the substrate, an n-type collector layer 16 on the subcollector, a p-type first base layer 18 by densely dope-processing on the collector layer and a p-type second base layer 20, which is thinner than the first base layer in actuality on the first base layer. Then a second base layer consists of the layer 20, which is not densely dope-processed than the first base layer and an n-type emitter layer on the second base layer, and the second base layer is an n-type emitter layer working as a diffusion barrier between a base and an emitter.
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