FABRICATION OF SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE:To fabricate a DRAM memory cell in which sufficient capacitance is ensured even for a high integration circuit element of 64Mbit or above. CONSTITUTION:Tungsten ions are introduced into a part for forming a lower electrode 9 on a silicon substrate 1 and an interlayer insulation film 5 and then a poly-Si film is grown by CVD in order to form the lower electrode 9. Since the poly-Si film is grown in the form of whisker crystal through catalytic function of the tungsten ions, irregularities 9' are formed on the top face of the lower electrode 9 after crystal growth. The irregularities 9' increase effective surface area of the lower electrode 9 thus increasing the capacitance.