发明名称 FLUSH TYPE EEPROM AND SEMICONDUCTOR FILE DEVICE
摘要 <p>PURPOSE:To provide a flush type EEPROM where the defect/deterioration information are written before these information are delivered to the users. CONSTITUTION:The defect/deterioration information on a flush type EEPROM 1 are written in an erasing block 000 of the EEPROM 1. Therefore a device containing the EEPROM 1 reads first the defect/deterioration information out of the block 000 and sets again an address that has an access to the EEPROM 1 to exclude the addresses of the defect/deterioration parts. In such a constitution, the device can use the EEPROM 1 even if the device has no ability to check the defect/deterioration parts of the EEPROM 1.</p>
申请公布号 JPH06131892(A) 申请公布日期 1994.05.13
申请号 JP19920274745 申请日期 1992.10.14
申请人 TOSHIBA CORP 发明人 SUKEGAWA HIROSHI
分类号 G06F12/16;G06F12/00;G11C16/02;G11C16/06;G11C17/00;(IPC1-7):G11C16/06 主分类号 G06F12/16
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