| 摘要 |
<p>PURPOSE:To form a polysilicon film uniformly crystallized quickly by forming a multilayer crystalline silicon film and an amorphous silicon film and annealing the multilayer film to crystallize then by solid phase growth. CONSTITUTION:SiH4/H2 mixed gas for crystalline is introduced into a reaction chamber from a gas introduction port and at the same time the pressure inside the reaction chamber is adjusted to a specific value. Then, high frequency energy is applied by a high-frequency power supply, thus forming crystalline silicon film 21 on the surface of a glass substrate 7. In this state, the flow rate of H2 gas is reduced after a specific time to adjust the mixing ratio for amorphousness. After a specific time passes, the high-frequency application is stopped and at the same time the introduction of gas is stopped, thus forming amorphous silicon film 22 on the surface of the crystalline silicon film 21 and hence forming a multilayer film 23 consisting of the crystalline silicon film 21 and the amorphous silicon film 22 on the glass substrate 7 and annealing the film 23 to form a polysilicon film 24.</p> |
