| 摘要 |
PURPOSE:To obtain a semiconductor memory device in which instability dependent on the data pattern of the adjacent memory cell is eliminated. CONSTITUTION:In a static RAM where a high resistance load element disposed between a power supply line and a memory node is formed of a third polysilicon layer, the third polysilicon layers 31d, 31e composing a load resistor are formed in planar shape while being isolated for each memory cell and connected through contacts 32e, 32f directly with a second polysilicon layer 4d composing the power supply line. This constitution eliminates instability dependent on the data pattern of adjacent memory cell and facilitates detection of defect caused directly by the resistance of contact. |
