| 摘要 |
PURPOSE:To form a ferroelectric capacitor having low leak characteristics which can be micromachined easily. CONSTITUTION:In a semiconductor device having a capacitor employing a ferroelectric material, a lower electrode material and a ferroelectric material are deposited and a two-layer film is micromachined simultaneously using photoetching technology to form a lower electrode 109 and a ferroelectric material film 110. A dielectric film is then deposited thereon and the entire surface is subjected to etch back thus forming a side wall 111. Subsequently, an upper electrode material is deposited followed by micromachining using photoetching technology to form an upper electrode 112 thus obtaining a capacitor. |
