| 摘要 |
<p>PURPOSE:To improve the sensitivity of a solid-state image sensing device having a microlens layer in a state where its diaphragm is open. CONSTITUTION:A photoelectric conversion element part 2 is prepared on the surface of a semiconductor substrate 1. On the part 2 a microlens layer 5 is formed with an intermediate layer 4 in between. A plate condensing layer 6 which is made of a material having a larger refractive index than that of the layers 4 and 5 is formed in the layer 4. Thus the incident angle range of diagonal incident light Lt to be collected will become wider and the decrease in sensitivity in a peripheral part be prevented while the diaphragm is open. Especially, by making the layer 6 to become like a convex lens in the central part of the part 2, the condensing range of vertical incident light is widen in the central part where there are much vertical incident light and the incident angle range to collect the diagonal incident light is also widen in the peripheral part where are relatively much diagonal incident light, so that high sensing effect can be obtained.</p> |
