| 摘要 |
PURPOSE:To provide a structure of a light emitting diode capable of condensing light without using a condensing member such as lens. CONSTITUTION:In a light emitting diode 1, a reflection layer 3, an N-type cladding layer 4, an active layer 5 and a P-type cladding layer 6 are sequentially stacked on an n-GaAs substrate 2 having a spherical recess 2a on the substantially center part using MOCVD or MBE method, and thereby each semiconductor crystal layer is formed along the spherical recess 2a of the substrate 2, and a light output surface 7 on the top of the P-type cladding layer 6 is formed into a spherical shape. Also, in the light emitting diode 1, P-type electrodes 8 are installed on flat parts on the top of the P-type cladding layer 6, that is, parts other than the spherical shape, and an N-type electrode 9 is installed in a place corresponding to a light emitting region in an active layer on the bottom of the substrate 2. By forming the active layer 5 into the spherical shape in such the manner, output light can be condensed without using a condensing member such as lens. |
