FORMING METHOD FOR TWISTED MULTILAYER INTERCONNECTIONS OF SEMICONDUCTOR DEVICE OR THE LIKE

摘要

PURPOSE:To enhance wiring density by twisting interconnections of upper and lower layers via in-line or concentrated holes. CONSTITUTION:A left interconnection A of an upper wiring layer 2 is connected with a central interconnection A of a lower wiring layer 3 via holes 1 provided between right ends and the left ends of the central interconnection A. Further, the central interconnection A is connected with the left interconnection A via holes 1 provided between the right lower ends and a left lower end of the right interconnection A. Similarly, a left interconnection B the wiring layer 3 is connected with a central interconnection B of the wiring layer 2, and the central interconnection B 2 is connected with a right interconnection B of the wiring layer 3 via the holes 1 provided at predetermined positions of the interconnections. In this case, the wiring layers 2, 3 are twisted between the upper and lower layers.