| 摘要 |
<p>PURPOSE:To improve adhesion to a base substrate and to reduce the number of defect generation in masks by cleaning the base substrate surface by a gas plasma which leaves no SOG (spin on glass) and no reactive residues, etc., on the base substrate. CONSTITUTION:The base substrate 1 is constituted by providing with a conductive layer 3 consisting of SnO2, etc., on a transparent substrate 2 and is subjected to a surface cleaning treatment 4 by Ar plasma and is then coated and formed with SOG shifter layer 5 with a spinner. Then, Cr light shielding film 7 is formed by a sputtering method 6 to form a blanks 8 for phase shift mask in which the substrate 1, the SOG film and the light shielding film 7 are arranged. By applying the plasma treatment in such a manner, stickings of residues or products to the base substrate surface which are peculiar to a water cleaning treatment are eliminated and the base substrate surface and the SOG film are not deteriorated. By applying the cleaning treatment with the Ar gas plasma to the base substrate surface, the base substrate surface is activated and the adhesion between the base substrate 1 and the SOG film is improved.</p> |
