| 摘要 |
<p>PURPOSE:To form fine patterns in large area at a time by etching a first film so that a photoresist may be in the shape of a canopy to it, and removing the photoresist after formation of a second film, and removing the first and second film after formation of a third film. CONSTITUTION:A first film 2 of Al is made on a substrate 1 by sputtering method, and photoresist 3 is applied all over the surface, and it is patterned, using a specified photomask. Then, with the patterned photoresist 3 as a mask, the first film 2 is etched. Here, the resist 3 becomes the shape of a canopy to the first film 2. Next, the second film 4 is made under the same condition as the first film 2. Then, the photoresist 3 is dissolved, and a third film 5 of Ta to form a fine pattern is sputtered. Next, the first and second film of Al are dissolved, and the needless third film 5 on the topside of these are removed at the same time, and a third film 5 is made on the substrate 1.</p> |
