| 摘要 |
PURPOSE:To provide a highly reliable hybrid integrated circuit device loaded with power MOS-FET as a bare chip. CONSTITUTION:In a hybrid integrated circuit device wherein at least one power MOS-FET 2 in a bare chip state and a control IC 1 for controlling the power MOS-FET are mounted on a circuit board 3, a burn-in testing voltage supply wire 5 supplying burn-in test voltage to the gate terminal of the power MOS- FET 2 is provided independently of the control IC 1 to effectively and simply perform a burn-in test. When a plurality of MOB-FITs 2 are provided, the burn-in test voltage wire 5 mutually connecting the gate terminals of the MOS- FETs 2 is provided and, after the burn-in test, the supply wire 5 is cut to electrically separate the respective gate terminals or a resistor having a predetermined resistance value is inserted in the supply wire 5 so as not to generate trouble in usual operation. |
