| 摘要 |
PURPOSE:To electrically isolate a source-drain area from a silicon substrate. CONSTITUTION:A buried layer 3 which is a p-type impurity diffusion layer is provided under an n-type diffusion layer 1 which is a source-drain area, and these both n-type diffusion layers 1 are connected together with a thin wire part 2 insulated from a silicon substrate, and, the periphery part of the both n-type diffusion layers 1, other than the connection part with the thin wire part 2, is covered with such electrically inactive layer as a silicon oxide film or atmosphere. By this, even a fine line channel of small size or of high resistance is used for obtaining prominent quantum effect, since the source-drain area is electrically isolated from the silicon substrate, the electrons in the source area are made to flow into the thin wire channel efficiently. |
