METHOD FOR GROWING SEMICONDUCTOR CRYSTAL AND MANUFACTURE OF MOS-TYPE TRANSISTOR,申请号JP19920301565-传众专利搜索

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发明名称	METHOD FOR GROWING SEMICONDUCTOR CRYSTAL AND MANUFACTURE OF MOS-TYPE TRANSISTOR
摘要
申请公布号	JPH06132218(A)	申请公布日期	1994.05.13
申请号	JP19920301565	申请日期	1992.10.15
申请人	SONY CORP	发明人	YAMAMOTO HIROSHI
分类号	H01L21/20;H01L21/265;H01L21/336;H01L29/78;H01L29/786;(IPC1-7):H01L21/20;H01L29/784	主分类号	H01L21/20
代理机构		代理人
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