| 摘要 |
<p>PURPOSE:To manufacture the semiconductor, etc., consisting of a fine pattern which cannot be manufactured easily by the optical lithography technology with a high throughput and accurately. CONSTITUTION:A pattern which is four times larger than that on a wafer is drawn by an electron beam drawing device 21 for creating a reticle 1. a working reticle 2-1 is created using an optical stepper 22 with a reduction factor of 1/2 from the reticle 1, and a stencil mask 5-1 which is created by the working reticle 2-1 is set to an electron beam reduction transfer device 23 with a reduction factor of 1/2 and then a pattern is transferred onto a wafer 7-1.</p> |
