| 摘要 |
<p>PURPOSE:To suppress OFF leak current from increasing by preventing a MOS type transistor parasitic channel and bipolar action from occurring during light emitting. CONSTITUTION:A channel formed area 107 comprising a monocrystal semi-conductor, a source area 105, drain area 106, etc., are formed on a composite substrate in which a semi-conductor thin film layer is formed on a bed insulation layer 102. Also a gate electrode 110 is formed on the channel formed area 107 through a gate insulation film 109 to constitute a MOS-type transistor 100. In addition, a composite substrate in which a picture element electrode is formed at the upper part of the bed insulation layer 102 and an opposed substrate on which an electrode is formed are faced to each other, and stuck with a gap provided. Then an electro-optical substance comprising liquid crystal material is sealed in the gap to constitute an optical valve device.</p> |
