| 摘要 |
PURPOSE:To prevent a transfer of a defective part on a wafer even when a defective part generated on a phase shifter is corrected by interposing a prescribed transparent film between an optical mask substrate and a phase shift for giving a phase difference to a transmitted light. CONSTITUTION:On a quartz substrate 11, a light shielding pattern film 12 consisting of chromium and an etching stop layer 13 which is consisting of aluminum oxide and covers the film 12 are formed. On the etching stop layer 13, the transparent film 14 consisting of silicon oxide is formed by applying a vapor deposition method. Moreover, the transparent film 14 affords the 90 deg. phase difference when i line (365nm) is used. When the phase shifter 15 consisting of silicon oxide with, for example, 3800Angstrom thickness is formed on the transparent film 14 by applying a resist process, a vapor deposition method and a lift-off method in the lithography technique to prepare a phase shift optical mask, a defective part 15A is generated in the phase shifter 15. The phase shifter 15 in a normal case affords a 180 deg. phase difference when i line is applied. |
