| 摘要 |
<p>PURPOSE:To provide a thin film switching element having a threshold voltage higher than that of a conventional NIN element while the element shows V-I characteristics symmetrical to a bipolar voltage. CONSTITUTION:First semiconductor layers 5 and 6 consisting of an N-type silicon layer are respectively formed on an insulative substrate 1 in opposition to first and second electrode layers 2 and 3 holding a gap part 4 between them and are individually laminated on the layers 2 and 3. Moreover, a second semiconductor layer 7 consisting of a non-doped I-type silicon layer, a third semiconductor layer 8 consisting of an N-type silicon layer and an upper electrode layer 9 are laminated in order in a form that the layer 5 on the layer 2, the gap part 4 and the layer 6 on the layer 3 are covered with them to constitute a switching element and a threshold voltage of the switching element is improved.</p> |
