发明名称 PROGRAMMING METHOD OF EEPROM MEMORY ARRAY
摘要 <p>PURPOSE: To drive an array by connecting a selective cell respectively to a selective row, drain row and word line and a nonselective cell respectively to a nonselective source row, drain row and word row to select a program voltage as if it is previously prescribed, to supply timewisely. CONSTITUTION: The control gate 14 of each FGFET 10 of a row is connected to the word line 15 and each word line 15 is connected to a decoder 16. The source 11 of each cell 10 of a column is connected with a decoder 18 through each column line. A drain 12 is connected to the decoder 18 through a column line 19. In this constitution, the program voltage is previously select-fixed to be VPP>VSSO, VPP>Vhs3 , Vhs4 ,Vhs5 >V to supply by a prescribed timewise sequence. Thereby, the erasing of a nonselective and previously programed cell and the erasing of a program are minimized to prevent the careless program of an unprogrammed and nonselective cell to program E<2> PROM cell.</p>
申请公布号 JPH06131883(A) 申请公布日期 1994.05.13
申请号 JP19910220209 申请日期 1991.08.30
申请人 TEXAS INSTR INC <TI> 发明人 MANZUAA JIRU;SANGU UEI RIN;SEBASUTEIAANO DARIGO
分类号 G11C17/00;G11C16/02;G11C16/08;G11C16/10;H01L21/8247;H01L27/115;(IPC1-7):G11C16/06;G11C16/04 主分类号 G11C17/00
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