| 摘要 |
An amorphous Si/SiC heterojunction color-sensitive phototransistor was successfully fabricated by plasma-enhanced chemical vapor deposition. The structure is glass/ITO/a-Si(n+-i-p+)/a-SiC(i-n+)/Al. The device is a bulk barrier transistor with a wide-bandgap amorphous SiC emitter. The phototransistor revealed a very high optical gain of 40 and a response speed of 10 us at an input light power of 5 uW and a collector current of 0.12 mA at a voltage of 14 V. The peak response occurs at 610 nm under 1 V bias and changes to 420 and 540 nm under 7- and 13-V biases, respectively.
|
