发明名称 Polycrystalline silicon rod for floating zone method and process for making the same
摘要 A polycrystalline silicon rod for preparing a monocrystalline silicon rod by a floating zone method, wherein at least a central portion of the section of the polycrystalline silicon rod has coarsened silicon monocrystalline grains around the center over an area of or above the minimum section of a molten zone during progress in the floating zone method and the outer peripheral portion of the coarsened region has fine monocrystalline grains. From the polycrystalline silicon rod, the monocrystalline silicon rod for a semiconductor is prepared with a high yield by the single floating zone method.
申请公布号 US5310531(A) 申请公布日期 1994.05.10
申请号 US19920983784 申请日期 1992.11.30
申请人 SHIN-ETSU HANDOTAI CO., LTD. 发明人 IKEDA, YASUHIRO;OGURO, KYOJI
分类号 C30B13/00;C30B29/06;(IPC1-7):C01F3/00 主分类号 C30B13/00
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