发明名称 Synchronous type semiconductor memory
摘要 PCT No. PCT/JP91/01584 Sec. 371 Date Apr. 12, 1993 Sec. 102(e) Date Apr. 12, 1993 PCT Filed Nov. 19, 1991 PCT Pub. No. WO92/09083 PCT Pub. Date May 29, 1992.A DRAM is capable of regulating an output timing of a read data. The output timing of the read data can be regulated by the DRAM which has a circuit (127) for counting the number of clock pulses until the read data is transferred to a data latch circuit (121) and a circuit (129) for outputting the counted number. The DRAM has a circuit (125) which can regulate the output timing in response to an external input signal.
申请公布号 US5311483(A) 申请公布日期 1994.05.10
申请号 US19930890592 申请日期 1993.04.12
申请人 OKI ELECTRIC INDUSTRY CO., LTD. 发明人 TAKASUGI, ATSUSHI
分类号 G11C7/22;G11C11/4076;(IPC1-7):G11C11/402;G11C29/00 主分类号 G11C7/22
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