发明名称 Method for producing semiconductor film
摘要 A method for producing a semiconductor film comprising steps of: preparing a first substrate and a second substrate; superposing the first substrate on the second substrate to form an assembly of combined substrates; applying energy to the assembly of combined substrates to melt a portion within the assembly to form a molten portion therein; cooling the molten portion to crystallize the portion to form a single crystal structure therein; and separating the first substrate from the second substrate. The method makes it possible to control the crystal axis orientation of the recrystallized single crystal structure.
申请公布号 US5310446(A) 申请公布日期 1994.05.10
申请号 US19920912894 申请日期 1992.07.13
申请人 RICOH COMPANY, LTD. 发明人 KONISHI, JUNICHI;MAARI, KOUICHI;TANEDA, TOSHIHIKO;KISHIMOTO, AKIKO
分类号 C30B11/00;C30B13/00;H01L21/20;H01L21/336;H01L21/762;(IPC1-7):C30B25/00 主分类号 C30B11/00
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