发明名称 |
Method for producing semiconductor film |
摘要 |
A method for producing a semiconductor film comprising steps of: preparing a first substrate and a second substrate; superposing the first substrate on the second substrate to form an assembly of combined substrates; applying energy to the assembly of combined substrates to melt a portion within the assembly to form a molten portion therein; cooling the molten portion to crystallize the portion to form a single crystal structure therein; and separating the first substrate from the second substrate. The method makes it possible to control the crystal axis orientation of the recrystallized single crystal structure.
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申请公布号 |
US5310446(A) |
申请公布日期 |
1994.05.10 |
申请号 |
US19920912894 |
申请日期 |
1992.07.13 |
申请人 |
RICOH COMPANY, LTD. |
发明人 |
KONISHI, JUNICHI;MAARI, KOUICHI;TANEDA, TOSHIHIKO;KISHIMOTO, AKIKO |
分类号 |
C30B11/00;C30B13/00;H01L21/20;H01L21/336;H01L21/762;(IPC1-7):C30B25/00 |
主分类号 |
C30B11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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