Integrated circuit memory with asymmetric row access topology

摘要

A DRAM or VRAM integrated circuit memory of the divided bit line design includes a first bit line pair divided into a first pair of bit line halves and a second pair of bit line halves, and second bit line pair divided into a third pair of bit line halves and a fourth pair of bit line halves. A row decoder addresses a row associated with the first pair of bit line halves during a first time period, addresses a row associated with the second pair of bit line halves in a second time period, addresses a row associated with the third pair of bit line halves in the first time period, and addresses a row associated with the fourth pair of bit line halves in the second time period. The access topology is thus asymmetric with respect to a column decoder connected to the second and third pairs of bit line halves.