| 摘要 |
PURPOSE:To improve the efficiency in cleaning the inner face of a vacuum vessel in a microwave plasma treating device by etching. CONSTITUTION:An electrode 13 is arranged around a substrate holder 2 in a vacuum vessel 5 to surround the holder. A high-frequency wave of the frequency capable of being followed by the ion in plasma is impressed on the electrode 13 in plasma cleaning. In this case, at least one high-frequency wave impressing electrode is set in the substrate holder, and the surface of the electrode is shaped so that the normal to the electrode reaches the entire area of the part to be cleaned on the inner wall surface of the vacuum vessel without being interrupted. Besides, a better result is produced, when plural impressing electrodes are used, and the power to be impressed on the electrode is independently controlled.
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