Photoelectric converter with electron injection preventive layer

摘要

An improved photoelectric converter with reduced dark current includes a first electrode on a substrate covered by a semiconductor layer for photoelectric conversion. A second electrode is disposed on the semiconductor layer. An electron injection preventive layer is inserted between the semiconductor layer and the second electrode for preventing electrons from being injected from the second electrode into the semiconductor layer. The electron injection preventive layer is formed of a material satisfying the inequality: phi M-x2>/=Eg1 where the work function of the second electrode is phi M, the electron affinity of the electron injection preventive layer is x2, and the band gap energy of the semiconductor layer is Eg1.