SEMICONDUCTOR PATTERN MEASUREMENT EQUIPMENT

摘要

a mask for the buried layer in which at least eleven square patterns having a side of length 50 μm are disposed at 50 μm intervals and values of ±1 - ±5 are indicated horizontally and vertically on the patterns taking the central pattern as 0; and a mask for the device isolation in which at least eleven patterns greater than the patterns of the buried-layer mask by 5 m are disposed horizontally and vertically at 46 μm interval and misaligned by ±1 - ±5 μm from the central square pattern, thereby precisely measuring the pattern movement.