| 摘要 |
PURPOSE:To obtain a semiconductor storage device and semiconductor device composed thereof wherein the stand-by current is easily measured with accuracy. CONSTITUTION:A supply voltage pad 13 and GND pad 15 are placed in one side edge region A1 in a SRAM chip 20, and they are also positioned in the other side edge region A2 opposite to the one side edge region A1. When a plurality of such SRAM chips 20 are orderly disposed on a semiconductor wafer, the supply voltage pads 13 and GND pads 15 adjacent in the Y-direction are placed close to each other with a dicing line 16 in-between. This facilitates the measurement of stand-by current using a prober in a plurality of semiconductor storage devices, and enables the accurate measurement of stand-by current of one semiconductor storage device. |
