发明名称 DRY ETCHING DEVICE
摘要 <p>PURPOSE:To maintain a wafer temperature as desired or control it at an arbitrary value. CONSTITUTION:A temperature detection part 18 for detecting a wafer temperature and a pressure detection part 16 for detecting a pressure of cooling gas are provided to a substrate stage 2 whereon a semiconductor wafer 3 is mounted. A wafer temperature and a cooling gas pressure during etching treatment are monitored and change thereof is output to a pressure control device 15 of cooling gas through a control part 22. A wafer temperature is maintained as desired or controlled at an arbitrary value in this way.</p>
申请公布号 JPH06124916(A) 申请公布日期 1994.05.06
申请号 JP19920272898 申请日期 1992.10.12
申请人 RYODEN SEMICONDUCTOR SYST ENG KK;MITSUBISHI ELECTRIC CORP 发明人 OKURA EIICHIRO;TOYODA MASATO
分类号 H01L21/302;H01L21/3065;H01L21/68;H01L21/683;(IPC1-7):H01L21/302 主分类号 H01L21/302
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