发明名称 |
DRY ETCHING DEVICE |
摘要 |
<p>PURPOSE:To maintain a wafer temperature as desired or control it at an arbitrary value. CONSTITUTION:A temperature detection part 18 for detecting a wafer temperature and a pressure detection part 16 for detecting a pressure of cooling gas are provided to a substrate stage 2 whereon a semiconductor wafer 3 is mounted. A wafer temperature and a cooling gas pressure during etching treatment are monitored and change thereof is output to a pressure control device 15 of cooling gas through a control part 22. A wafer temperature is maintained as desired or controlled at an arbitrary value in this way.</p> |
申请公布号 |
JPH06124916(A) |
申请公布日期 |
1994.05.06 |
申请号 |
JP19920272898 |
申请日期 |
1992.10.12 |
申请人 |
RYODEN SEMICONDUCTOR SYST ENG KK;MITSUBISHI ELECTRIC CORP |
发明人 |
OKURA EIICHIRO;TOYODA MASATO |
分类号 |
H01L21/302;H01L21/3065;H01L21/68;H01L21/683;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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