| 摘要 |
PURPOSE:To realize easier probing, by performing etching from the rear of a semiconductor substrate at the lower part of an electric terminal, forming an insulating film on the rear, forming a contact hole for contact with the electric terminal, and forming a bonding pad from the contact hole to the rear of the semiconductor substrate. CONSTITUTION:After resist is formed on the substrate rear containing a rough aperture part 6, the resist is patterned by photolithography, in order to etch a part to be in contact with an electrode terminal 3 on the surface. By using this mask, etching is performed from the rear, and a contact hole 8 is formed. After the resist is eliminated, an insulating film 9 is formed. The bottom surface of the electric electrode 3 is exposed in the contact hole 8 by anisotropic etching or the like. In order to form wiring for a pad on the rear, wiring material 10 is formed in the contact hole 8 part. An electrode wiring (pad) 11 is formed from the rough aperture part 6 to the substrate rear. |
