| 摘要 |
<p>PURPOSE:To provide a nonvolatile storage device which enables a larger number of times of rewriting and reduces the power consumption. CONSTITUTION:Memory transistors 21A, 21B, 21C and 21D are disposed in a virtual grand array on a silicon substrate 20 in such a way that the ends of field oxide films 30 on the source region side extend to source regions 23 well beyond offset regions. Word lines WL1 and WL2 are connected to the gate electrodes 26 on the memory transistors 21A, 21B, 21C and 21D disposed in the direction of row; bit lines BL1, BL2 and BL3 are connected to the source 23 and drain 24 regions, including regions common thereto, on the memory transistors 21A, 21C, 21B and 21D in the direction of column.</p> |
