| 摘要 |
PURPOSE:To obtain a silicon quantum fine line by etching a silicon substrate through an etching window of a mask material where a film is formed on the silicon substrate including a first stepped part followed by performing anistropic etching of a vertical part of a second stepped part deeper than the first stepped part. CONSTITUTION:A photoresist 2 is applied to a silicon substrate 1 so as to form a first stepped part 3 on the silicon substrate 1 by etching. The resist is removed and an SiO2 film 4 is formed on the substrate 1 including the first stepped part 3 a mask material. Next, a photoresist 5 is applied to the SiO2 film 4 so as to remove a part of the SiO2 film 4 by etching. Next, the silicon substrate 1 is etched from this removed part so as to form a second stepped part 6. Next, anisotropic etching is performed after removal of the photoresist. Finally, a part remaining above the silicon substrate 1 to become a quantum fine line 7 is subjected to thermooxidation so as to form an SiO2 film 8. A single crystal silicon quantum fine line 7 is formed by adjusting the width. |
