| 摘要 |
PURPOSE:To simultaneously photoetch and etch by forming a floating gate and a control gate of the same layer. CONSTITUTION:A second insulating film 106 is formed on a first polycrystalline silicon 105 to become an insulating film between a floating gate and a control gate. Then, a contact hole 108 is formed on a second insulating film of a part to become a contact hole of a gate electrode of a transistor for a driving circuit, and a second polycrystalline silicon film 107 is formed on the film 106. Unnecessary parts of the silicon 105, the film 106 and the silicon 107 are removed, and formed as a gate electrode of the transistor for the driving circuit. Since the floating gate and the control gate connected with the gate electrode are formed of the same layer, a film thickness becomes the same with the gate electrodes of a memory cell and the transistor for the driving circuit, photoetching and etching can be performed simultaneously.
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