| 摘要 |
PURPOSE: To prevent excess etching of an element separation layer by containing the edge of an element active region and forming an etching prevention film on an element separation region. CONSTITUTION: A photosensitive film is formed on the entire face of a substance layer for forming a spacer 25. A field oxide film 21 which is the element separation region and an edge part being the peripheral edge par of the element active region are patterned, so that an etch prevention film 27 remains. Only the photosensitive film on the element active region is removed. When the photosensitive film is set as the etch prevention film 27 and a whole face etch-back process which is an anisotropic etching is executed, the substance layer for forming the spacer 25 is etched, and a spacer 25a is formed only on the sidewall of a gate electrode 23. When the photosensitive film which is the etching prevention film 27 is removed, the substance layer for forming the spacer 25 is left on an edge part 2A and the structure on the element separation region as it is. Thus, excessive etching at the edge part of the element separation layer is prevented, and a level difference between electrode wirings is prevented from becoming level difference deep. |
